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FDW9926A
March 2005
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench? MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V ? 10V).
Features
? 4.5 A, 20 V. RDS(ON) = 32 m @ VGS = 4.5 V RDS(ON) = 45 m @ VGS = 2.5 V
? Optimized for use in battery circuit applications ? Extended VGSS range (?10V) for battery applications ? High performance trench technology for extremely low RDS(ON) ? Low profile TSSOP-8 package
Applications
? Battery protection ? Load switch ? Power management
G2 S2 S2 D2 G1 S1 S1 D1
Pin 1
1 2 3 4
8 7 6 5
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current ? Continuous ? Pulsed Total Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
20 ?12
(Note 1a)
Units
V V A W ?C
4.5 30 1.0 0.6 ?55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
125 208
?C/W
Package Marking and Ordering Information
Device Marking 9926A Device FDW9926A Reel Size 13'' Tape width 12mm Quantity 3000 units
?2005 Fairchild Semiconductor Corporation
FDW9926A Rev E(W)
FDW9926A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25?C unless otherwise noted
Parameter
Drain?Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate?Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 ?A
Min
20
Typ
Max
Units
V
Off Characteristics
ID = 250 ?A, Referenced to 25?C VDS = 16 V, VGS = ?12 V, VGS = 0 V VDS = 0 V ID = 250 ?A 12 1 ?100 mV/?C ?A nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain?Source On?Resistance On?State Drain Current Forward Transconductance
VDS = VGS,
0.6
1.0 ?3 24 34 33
1.5
V mV/?C
ID = 250 ?A, Referenced to 25?C VGS = 4.5 V, ID = 4.5 A VGS = 2.5 V, ID = 3.8 A VGS = 4.5 V, ID = 4.5A, TJ=125?C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 4.5 A 15
32 45 48
m
ID(on) gFS
A 19 S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
630 150 85 1.4
pF pF pF
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn?On Delay Time Turn?On Rise Time Turn?Off Delay Time Turn?Off Fall Time Total Gate Charge Gate?Source Charge Gate?Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
8 8 15 4
16 16 26 8 9
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 4.5 A,
6.1 1.1 1.8
Drain?Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain?Source Diode Forward Current Drain?Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 0.83 A
(Note 2)
0.83 0.69 14 4 1.2
A V nS nC
IF = 4.5 A, diF/dt = 100 A/?s
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 125?C/W (steady state) when mounted on a 1 inch? copper pad on FR-4.
b) RJA is 208 ?C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300?s, Duty Cycle < 2.0%
FDW9926A Rev. E(W)
FDW9926A
Typical Characteristics
30 VGS = 10.0V 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0 0.5 1 4.5V
2.4
3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 2.0V
2.2 2 1.8 1.6
2.5V
3.5V 2.5V
2.0V
1.4 1.2 1 0.8
3.0V 3.5V 4.0V 4.5V 10.0V
1.5
2
2.5
3
0
5
VDS, DRAIN-SOURCE VOLTAGE (V)
10 15 20 ID, DRAIN CURRENT (A)
25
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate voltage.
0.09
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 4.5A VGS = 10V 1.4
ID = 2.25A
RDS(ON), ON-RESISTANCE (OHM) 0.07
1.2
0.05
1
TA = 125oC
0.03
0.8
TA = 25 C
0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150
0.01 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
o
Figure 3. On-Resistance Variation with temperature.
30
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5V
25 ID, DRAIN CURRENT (A)
IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
125 C
o
VGS = 0V
10 1 0.1 0.01 0.001 0.0001
TA = 125oC 25oC
o
20
25 C
15
o
10
-55 C
5
0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 3.5
0
0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW9926A Rev. E(W)
FDW9926A
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 4.5A 4
CAPACITANCE (pF)
900
VDS = 5V
15V
f = 1MHz VGS = 0 V 600 Ciss
10V 3
2
300 Coss
1
Crss
0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) 6 7 8
0 0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) 20
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
RDS(ON) LIMIT 1ms ID, DRAIN CURRENT (A) 10 10ms 100ms 1s 1 DC VGS = 4.5V SINGLE PULSE RJA = 208oC/W TA = 25oC 10s
100us
40
SINGLE PULSE RJA = 208?C/W TA = 25?C
30
20
0.1
10
0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05
RJA(t) = r(t) * RJA RJA =208 ?C/W P(pk)
0.02 0.01
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDW9926A Rev. E(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I15